Product Summary

The 2SB1261 is a PNP silicon epitaxial transistor. It is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Parametrics

2SB1261 absolute maximum ratings: (1)Collector to Base Voltage: -60V; (2)Collector to Emitter Voltage: -60V; (3)Emitter to Base Voltage: -7.0V; (4)Collector current (DC): -3.0A; (5)Collector current (Pulse): -5.0A; (6)Base Current (DC): -0.5A; (7)Total Power Dissipation (TA=25℃): 2.0W; (8)Total Power Dissipation (TC=25℃): 10W; (9)Junction Temperature: 150℃; (10)Storage Temperature: -55℃ to 1501℃.

Features

2SB1261 features: (1)High hFE: hFE=100 to 400; (2)Low VCE (sat): VCE (sat)≤0.3V.

Diagrams

2SB1261 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SB1261-Z
2SB1261-Z

Other


Data Sheet

Negotiable 
2SB1261-Z-T1
2SB1261-Z-T1

Other


Data Sheet

Negotiable