Product Summary

The 2SJ526 is a Silicon P Channel MOS FET High Speed Power Switching.

Parametrics

2SJ526 absolute maximum ratings: (1)Drain to source voltage VDSS: –60 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: –12 A; (4)Drain peak current ID(pulse): –48 A; (5)Body-drain diode reverse drain current: IDR –12 A; (6)Avalenche current IAP: –12 A; (7)Avalenche energy EAR: 12 mJ; (8)Channel dissipation Pch: 25 W; (9)Channel temperature Tch: 150℃; (10)Storage temperature Tstg: –55 to +150℃.

Features

2SJ526 features: (1)Low on-resistance RDS(on) = 0.11 Ω typ.; (2)Low drive current; (3)4 V gete drive devices; (4)High speed switching.

Diagrams

2SJ526 Switching Time Test Circuit

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2SJ526
2SJ526

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2SJ501
2SJ501

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2SJ502
2SJ502

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2SJ503
2SJ503

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2SJ504
2SJ504

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2SJ505
2SJ505

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2SJ505(L)
2SJ505(L)

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