Product Summary

The AO4932 is an Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs of AO4932 make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4932 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AO4932 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±12 V; (3)Continuous Drain Current: 9.0 A at TA=25℃, 7.2 A at TA=70℃; (4)Pulsed Drain Current: 40 A; (5)Avalanche Current: 16 A; (6)Repetitive avalanche energy L=0.3mH: 38 mJ; (7)Power Dissipation: 2.0 W at TA=25 ℃, 1.3 W at TA=70 ℃; (8)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4932 features: (1)VDS (V) = 30V; (2)ID = 9A (VGS = 10V); (3)RDS(ON) < 15.8mΩ (VGS = 10V); (4)RDS(ON) < 19.6mΩ <23mΩ (VGS = 4.5V).

Diagrams

AO4932 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4932
AO4932

MOSFET DUAL N-CH 30V 9A ASYM SO8
Data Sheet
0-1: $0.58
1-25: $0.45
25-100: $0.40
100-250: $0.34
250-500: $0.29
500-1000: $0.23
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(USD)		 Quantity
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