(China (Mainland))
Product Summary
The B20NK50Z is an N-Channel 500V Zener-Protected SuperMESH MOSFET, which is obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The B20NK50Z is ideal for high current, high speed switching, off-line power supplies, adaptors and PFC.
Parametrics
B20NK50Z absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 500 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kΩ): 500 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 17 A; (5)ID, Drain Current (continuous) at TC = 100℃: 10.71 A; (6)IDM, Drain Current (pulsed): 68 A; (7)PTOT, Total Dissipation at TC = 25℃: 190 W; (8)Derating Factor: 1.51 W/℃; (9)VESD(G-S), Gate source ESD(HBM-C=100 pF, R=1.5 KΩ): 6000 V; (10)dv/dt,Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Tj, Tstg, Operating Junction Temperature and Storage Temperature: -55 to 150 ℃.
Features
B20NK50Z features:(1)typical RDS(on) = 0.23 Ω; (2)extremely high dv/dt capability; (3)100% avalanche testedgate charge minimized; (4)very low intrinsic capacitances; (5)very good manufacturing repeatibility.
Diagrams
