Product Summary

The BSM100GB120DN2 is an IGBT Power Module.

Parametrics

BSM100GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 150 A at TC = 25 ℃, 100 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 300 A at TC = 25 ℃, 200 A at TC = 80 ℃; (6)Power dissipation per IGBT: 800 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -40 to + 125 ℃.

Features

BSM100GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM100GB120DN2 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GB120DN2
BSM100GB120DN2

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $82.74
1-10: $74.47
BSM100GB120DN2_B2
BSM100GB120DN2_B2

Infineon Technologies

IGBT Modules IGBT 1200V 100A

Data Sheet

0-6: $76.20
6-10: $69.00
BSM100GB120DN2E3256
BSM100GB120DN2E3256

Infineon Technologies

IGBT Modules IGBT POWER MODULE

Data Sheet

0-4: $114.50
4-5: $103.04
5-10: $91.60
10-50: $82.43
BSM100GB120DN2_E3254
BSM100GB120DN2_E3254

Infineon Technologies

IGBT Modules IGBT 1200V 100A

Data Sheet

0-6: $79.80
6-10: $72.00
BSM100GB120DN2_E3256
BSM100GB120DN2_E3256

Infineon Technologies

IGBT Modules IGBT 1200V 100A

Data Sheet

0-6: $84.00
6-10: $75.60
BSM100GB120DN2F
BSM100GB120DN2F

Infineon Technologies

IGBT Modules IGBT 1200V 100A

Data Sheet

0-6: $76.20
6-10: $69.00
BSM100GB120DN2K
BSM100GB120DN2K

Infineon Technologies

IGBT Modules 1200V 100A DUAL

Data Sheet

0-1: $66.47
1-5: $63.16
5-10: $59.86
BSM100GB120DN2F_E3256
BSM100GB120DN2F_E3256

Infineon Technologies

IGBT Modules IGBT 1200V 100A

Data Sheet

0-6: $84.00
6-10: $75.60