Product Summary

The BSM50GD120DN2-B10 is an IGBT Power Module.

Parametrics

BSM50GD120DN2-B10 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)Collector-gate voltage, RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:±20V; (4)DC collector current: TC = 25 ℃:72A, TC = 80 ℃:50A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃:144A, TC = 80 ℃:100A; (6)Power dissipation per IGBT, TC = 25℃:350W; (7)Chip temperature:+150℃; (8)Storage temperature:-55℃ to +150℃.

Features

BSM50GD120DN2-B10 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM50GD120DN2-B10 circuit diagram

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