(China (Mainland))
Product Summary
The CY62136EV30LL-45ZSXI is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL in portable applications such as cellular telephones. The CY62136EV30LL-45ZSXI also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The CY62136EV30LL-45ZSXI can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).
Parametrics
CY62136EV30LL-45ZSXI absolute maximum ratings: (1)Storage Temperature:–65℃ to + 150℃; (2)Ambient Temperature with Power Applied:–55℃ to + 125℃; (3)Supply Voltage to Ground Potential:–0.3V to 3.9V (VCC MAX + 0.3V); (4)DC Voltage Applied to Outputs in High-Z State[5,6]:–0.3V to 3.9V (VCC MAX + 0.3V); (5)DC Input Voltage[5,6]:–0.3V to 3.9V (VCC MAX + 0.3V); (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage＞: 2001V (per MIL-STD-883, Method 3015); (8)Latch-up Current: ＞200mA.
Features
CY62136EV30LL-45ZSXI features: (1)Very high speed: 45 ns; (2)Wide voltage range: 2.20V-3.60V; (3)Pin-compatible with CY62136CV30; (4)Ultra low standby power Typical standby current: 1μA; (5)Maximum standby current: 7μA; (6)Ultra-low active power; (7)Typical active current: 2mA @ f = 1 MHz; (8)Easy memory expansion with CE, and OE features; (9)Automatic power-down when deselected; (10)CMOS for optimum speed/power; (11)Offered in a Pb-free 48-ball VFBGA and 44-pin TSOP II packages.
Diagrams
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 CY62136EV30LL-45ZSXI |
Cypress Semiconductor |
SRAM SLO 3.0V SUPER LO PWR 128KX16 SRAM IND |
Data Sheet |
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CY62136EV30LL-45ZSXIT |
Cypress Semiconductor |
SRAM SLO 3.0V SUPER LO PWR 128KX16 SRAM IND |
Data Sheet |
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