(China (Mainland))
Product Summary
The CY62177DV30LL-55BAXI is a high performance CMOS static RAM organized as 2M words by 8 bits. The CY62177DV30LL-55BAXI features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life MoBL) in portable applications such as cellular telephones. The CY62177DV30LL-55BAXI also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling.
Parametrics
CY62177DV30LL-55BAXI absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage to Ground Potential:–0.3V to VCC(max) + 0.3V; (4)DC Voltage Applied to Outputs in High-Z State[4, 5]:–0.3V to VCC(max) + 0.3V; (5)DC Input Voltage[4, 5]:–0.3V to VCC(max) + 0.3V; (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: ＞2001V (MIL-STD-883, Method 3015); (8)Latch up Current: ＞200 mA.
Features
CY62177DV30LL-55BAXI features: (1)Very high speed: 45 ns; (2)Wide voltage range: 2.20V to 3.60V; (3)Ultra low standby power; (4)Typical standby current: 1.5μA; (5)Maximum standby current: 12μA; (6)Ultra low active power; (7)Typical active current: 2.2 mA @ f = 1 MHz; (8)Easy memory expansion with CE1, CE2 and OE features; (9)Automatic power down when deselected; (10)CMOS for optimum speed/power; (11)Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package, refer to CY62167EV30 data sheet.
Diagrams
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 CY62177DV30LL-55BAXI |
Cypress Semiconductor |
SRAM SLO 3V SUPER LO PWR 1MEGX 6 IND |
Data Sheet |
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CY62177DV30LL-55BAXIT |
Cypress Semiconductor |
SRAM SLO 3V SUPER LO PWR 1MEGX 6 IND |
Data Sheet |
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