(China (Mainland))
Product Summary
The FDA20N50 is a 500V N-Channel MOSFET. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDA20N50 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDA20N50 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500V; (2)ID Drain Current - Continuous (TC = 25℃): 20A; (3)Continuous (TC = 100℃): 12.9A; (4)IDM Drain Current Pulsed: 80A; (5)VGSS Gate-Source voltage: ±30V; (6)EAS Single Pulsed Avalanche Energy: 1110mJ; (7)IAR Avalanche Current: 20A; (8)EAR Repetitive Avalanche Energy: 25.0mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.5V/ns; (10)PD Power Dissipation (TC = 25℃): 250W; (11)Derate above 25℃: 2.0W/℃; (12)TJ, TSTG Operating and Storage Temperature Range: -55℃ to +150℃; (13)TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds: 300℃.
Features
FDA20N50 features: (1)20A, 500V, RDS (on) = 0.24Ω@VGS = 10 V; (2) Low gate charge (typical 45.6nC); (3) Low Crss ( typical 27pF); (4) Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDA20N50 |
Fairchild Semiconductor |
MOSFET 500V NCH MOSFET |
Data Sheet |
Negotiable |
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FDA20N50_F109 |
Fairchild Semiconductor |
MOSFET 500V NCH |
Data Sheet |
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FDA20N50F |
Fairchild Semiconductor |
MOSFET 500V N-Channel |
Data Sheet |
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