(China (Mainland))
Product Summary
The IRF7811W is a HEXFET Power MOSFET for DC-DC Converters. This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make IRF7811W ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
Parametrics
IRF7811W absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source TA = 25℃ ID: 14A; (4)Current (VGS ≥ 4.5V) TL = 90℃: 13 A; (5)Pulsed Drain Current: 109A; (6)Power Dissipation TA = 25℃ PD: 3.1 W; TL = 90℃: 3.0W; (7)Junction & Storage Temperature Range: –55 to 150 ℃; (8)Continuous Source Current (Body Diode) IS: 3.8 A; (9)Pulsed Source Current, ISM: 109A.
Features
IRF7811W features: (1)N-Channel Application-Specific MOSFETs; (2)Ideal for CPU Core DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses; (5)100% Tested for Rg; (6)Lead-Free.
Diagrams
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Pricing (USD) |
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 IRF7811W |
Other |
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Data Sheet |
Negotiable |
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IRF7811WGTRPBF |
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MOSFET N-CH 30V 14A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7811WTRPBF |
International Rectifier |
MOSFET MOSFT 30V 14A 12mOhm 15.6nC |
Data Sheet |
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IRF7811WPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7811WTR |
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MOSFET N-CH 30V 14A 8-SOIC |
Data Sheet |
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