Product Summary

The K4S1616220-TC80 is a 16,777,216 bits synchronous high data rate Dynamic RAM which is organized as 2 x 524,288 words by 16 bits, fabricated with the high performance CMOS technology fo SAMSUNG. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. The K4S1616220-TC80 is useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K4S1616220-TC80 absolute maxing ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature TSTG: -55 ~ +150 ℃; (4)Power dissipation PD: 1 W; (5)Short circuit current IOS: 50 mA.

Features

K4S1616220-TC80 features: (1)3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Dual banks operation; (4)MRS cycle with address key programs: CAS Latency ( 2 & 3); Burst Length (1, 2, 4, 8 & full page); Burst Type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst Read Single-bit Write operation; (7)DQM for masking; (8)Auto & self refresh; (9)15.6μs refresh duty cycle (2K/32ms).

Diagrams

K4S160822D
K4S160822D

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Data Sheet

Negotiable 
K4S161622D
K4S161622D

Other


Data Sheet

Negotiable 
K4S161622D-TI/E
K4S161622D-TI/E

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Data Sheet

Negotiable 
K4S161622E
K4S161622E

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Data Sheet

Negotiable 
K4S161622H-TC55
K4S161622H-TC55

Other


Data Sheet

Negotiable 
K4S161622H-TC60
K4S161622H-TC60

Other


Data Sheet

Negotiable