(China (Mainland))
Product Summary
The SI6544BDQ-TI-E3 is an N-and P-Channel 30-V (D-S) MOSFET.
Parametrics
SI6544BDQ-TI-E3 absolute maximum ratings: (1)Continuous Source Current (Diode Conduction)a IS 1~0 0.7; (2)Maximum Power Dissipationa TA = 25℃ PD: 1.14~0.83W; (3)TA = 70℃ 0.73~0.53; (4)Operating Junction and Storage Temperature Range TJ, Tstg:-55 to 150 ℃; (5)Drain-Source Voltage VDS: 30 -30V; (6)Gate-Source Voltage VGS: 20.
Features
SI6544BDQ-TI-E3 features: (1)TrenchFET Power MOSFETS.
Diagrams
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 SI6542DQ-T1 |
Vishay/Siliconix |
MOSFET 20V 2.5/1.9A |
Data Sheet |
Negotiable |
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SI6543DQ-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 3.9/2.5A |
Data Sheet |
Negotiable |
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SI6543DQ-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.9/2.5A 1.0W 6.5/8.5mohm @ 10V |
Data Sheet |
Negotiable |
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SI6544DQ-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4/3.5A |
Data Sheet |
Negotiable |
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SI6562DQ-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 4.5/3.5A |
Data Sheet |
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SI6562DQ-T1-GE3 |
Vishay/Siliconix |
MOSFET N/P-Ch MOSFET 20V 30/50mohm @ 4.5V |
Data Sheet |
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