(China (Mainland))
Product Summary
The SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr:200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. The SQD300BA60 is designed for: Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application.
Parametrics
SQD300BA60 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 600 V; (2)VCEX, Collector-Emitter Voltage VBE=-2V: 600 V; (3)VEBO, Emitter-Base Voltage: 10 V; (4)IC, Collector Current ()=pw≦1ms: 300(600)A; (5)-IC, Reverse Collector Current: 300 A; (6)IB, Base Current: 18 A; (7)PT, Total power dissipation TC: 25.. 1380 W; (8)Tj, Junction Temperature: -40 to +150℃; (9)Tstg, Storage Temperature: -40 to +125℃; (10)VISO, Isolation Voltage A.C.1minute: 2500 V.
Features
SQD300BA60 features: (1)IC=300A, VCEX=600V; (2)Low saturation voltage for higher efficiency; (3)ULITRA HIGH DC current gain hFE. hFE≧750; (4)Isolated mounting base; (5)VEBO 10V for faster switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SQD300BA60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
|
SQD300BA60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
SQD35N05-26L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
 |
SQD35N05-26L-GE3 |
Vishay/Siliconix |
MOSFET 55V 35A 50W 20mohm @ 10V |
Data Sheet |
|
|
||||||||
|
SQD300AA120 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
SQD300AA100 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
|
SQD300A60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
